Product Feature 2
Jack Browne, Technical Director 1200
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2. The model MAPRST1030-1KS bipolar transistor features a linear transfer curve of output power versus input power through output levels exceeding 1 k W.
The rugged bipolar transistor is rated for maximum collector-emitter voltage of 65 V and maximum emitter-base voltage of 3
V. The peak collector current is rated at a robust 250 A while maximum total power dissipation at room temperature is 11. 6 k W.
The maximum rated junction temperature is +200ºC. The device is rated for minimum collector-emitter breakdown voltage of 65 V and minimum collector efficiency of 45 percent at 1 k W output power. At the rated 1-k W output power, the power gain is 8 dB or more and the input return loss is 10 dB or less. The bipolar is rated for
use with input power levels to 158 W. It can handle
load mismatches as severe as a VSWR of 10.0: 1.
Typical performance includes 1 k W output power
at 1030 MHz for an input power level of 134 W (Fig.
2). The device draws 39.5 A collector current when
tested with a 10-µs pulse at a 1-percent duty cycle.
The gain under those conditions is 8.74 dB with
efficiency of better than 50 percent. The overdrive
output power is 1184 W. The transistor exhibits maxi-
mum thermal resistance is 0.015ºC/W and maximum
collector-emitter leakage current of 30 mA.
According to Andrew Tse, product-line manager
TACTICAL AIR NAVIGATION SYSTEMS as well as pulsed avionics systems require large-signal amplification to reproduce short-pulsed waveforms with minimal time-domain distortion The new MAPRST1030-1KS bipolar transistor from M/A-COM ( www.macom.com) is a robust Class C device capable of delivering 1 k W peak power in 1030-MHz pulsed avionics systems.
The NPN silicon power transistor employs a common base configuration to provide efficient Class C power for short-pulsed applications. The device features gold metallization and diffused emitter ballasting resistors, and is supplied in a hermetic metal/ceramic flange package (Fig. 1) that is RoHS compliant. The devices interdigitated configuration results in even distributed power generation without thermal hot spots, and internal input and output impedance matching simplify installation into avionics amplifiers and other systems.
for M/A-COM Radar and Avionics, “The one-thousand-watt power rating on this new transistor can greatly enhance the range capabilities of new avionics systems. Additionally, the unique power capability of the product will contribute to more compact system designs, as one device can replace a pair of devices in the final amplifier circuit architecture.”
The model MAPRST1030-1KS pulsed bipolar transistor is ideal for identify-friend-or foe (IFF)/tactical air navigation (TACAN) systems and similar navigation and avionics systems employing short-pulsed waveforms. It is designed for use with a +50-VDC supply. The company offers a variety of driver stages for use with the power bipolar, including the MRF10005, MRF10031, and MRF10150 devices. P&A: $393; stock. Tyco Electronics, M/A COM, Inc., Pawtucket, MA 1011 Pawtucket Blvd., Lowell, MA 01853; (800) 366-2266, (978) 442-5000, FAX: (978) 366-2266, Internet: www.macom.com.
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